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Oxidation and Doping

Oxidation and Diffusion Furnaces

Most thermal oxidation is performed in furnaces, at temperatures between 800 and 1200°C. A single furnace accepts many wafers at the same time, in a specially designed quartz rack. An industrial furnace is also used for batch processing and oxidation of many wafers in a single run.


Ion Implantation

Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and impacted into another solid. This process is used to change the physical, chemical, or electrical properties of the solid. This method replaces classical diffusion methods.

EATON NV-6200AV

You are here:

Thin Film Laboratories,

Electric & Computer Engineering Department,

Faculty of Engineering, Campus #2
University of Tehran
Kargar Shomali St. (Passed the Jalal-Al-Ahmad St.,
Across the Ninth Lane)
Tehran, Iran

Tel : +98 21 8020403   Ext.3545