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Depositions (Physical and Chemical)

Electron Beam (E-Beam)

Electron-Beam (E-Beam) is a physical vapor deposition system employed for vacuum deposition by means of electron-beam assisted or thermal evaporation. Deposition rate and the thickness of the deposited layer are controlled by a Quartz Crystal Microbalance (QCM) with a one tenth angstrom precision.. Target materials used include Si, Cr, SiO2, Ti, Mo, Cu, Ni, …

VEECO VE-747

Sputtering

The sputtering system is the most uniform PVD system. Deposition of thin films is performed in a RF-plasma medium. Target materials used include semiconductors like Si, conductors such as Cr, Au, Ni, W, Mo, Cu, Ti,… and insulators such as Si3N4, SiO2, Al2O3, ZnO, ITO...

VAS OF-1807

Vacuum Thermal Evaporation

The Vacuum Thermal Evaporation system is one of the prevalent processes in physical vapor deposition (PVD) for depositing thin films of different materials. The following system in the lab is currently used for the deposition of Al, Ge, Cu, Ag and Au.

Chemical Vapor Deposition (CVD)

The Chemical Vapor Deposition (CVD) system is used for deposition by mediation of a chemical reaction, in contrast to e-beam and sputtering methods where reactions are exclusively physical.

RF Plasma Enhanced Chemical Vapor Deposition (RF-PECVD)

Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus is employed for low-temperature plasma-assisted deposition. It is used for the deposition of materials that can be produced by the chemical reactions sensitive to heat. This system can be used for the deposition of insulators. The applications of this system include the deposition of amorphous and polycrystalline semiconductors as well as insulators such as SiO2 and Si3N4.

Uniaxis 790 Series

DC-PECVD

The DC Plasma Enhanced Chemical Vapor Deposition System (DC-PECVD) is used for the deposition of materials that are produced from chemical reactions caused by heat. Since the plasma current is direct current, the sample substrates must be conductors or semiconductors in order to transmit the direct plasma current. This system is currently used for the growth of single-wall and multi-wall carbon nanotubes and hydrogenation.

SensIran PE-802

LPCVD

Low Pressure Chemical Vapor Deposition (LPCVD) is a process used for the growth of SiO2, Si3N4, polysilicon, epitaxial coatings as well as nanowires and many other materials. It deposits coatings with excellent purity and uniformity with good step coverage.

SensIran LP-130
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Thin Film Laboratories,

Electric & Computer Engineering Department,

Faculty of Engineering, Campus #2
University of Tehran
Kargar Shomali St. (Passed the Jalal-Al-Ahmad St.,
Across the Ninth Lane)
Tehran, Iran

Tel : +98 21 8020403   Ext.3545