Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus is employed for low-temperature plasma-assisted deposition. The applications of this system include the deposition of amorphous and polycrystalline semiconductors as well as insulators. This system may be also self-reconfigured for hydrogenation or Reactive Ion Etching (RIE).  

System has the #4 POX capability and includes extra pumps with purchase.

System includes SECS/GEM compliant host computer interface and limited TEOS hardware.

Currently running 6" wafers however capable for wafers up to 8"/200mm in diameter
 

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