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SEM images of nanostructures of silicon under different condition: (a) and (b) plasma power (6.5w/cm2), different temperatures of 350º C and 400º C respectively. (c) Si sample annealed at a reduced power of 4.5w/cm2. By reducing the plasma power and increasing the annealing temperature smaller grains are achieved.
TEM analyses for the silicon films, bright field and dark field images, indicating grains between 3 and 10 nm.
SEM imaging of P-Si nanostructure, light emission of the patterned P-Si
Selected area diffraction pattern of nano-crystalline Si
photoluminescence analysis of P-Si
PL measurement on various samples prepared using this study, (a) films with larger grains and less spread in grain distributions (b) films with smaller grains and more distribution of the grain sizes. By raising the plasma power, smaller grains are resulted.
The Pl analysis of Nano- crystalline of silicon that indicated the red and green wavelength from band gap
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