Behnaz Arvan
B.Sc. (Physics)
International University of Emam Khomeyni, Qazvin.
Project: Study of the quantum-mechanical modeling and
formulation of scattering mechanisms in solids.
M.Sc. (Solid-State Physics)
University of Tehran, Tehran, IRAN.
Thesis Project: Deposition of high-k dielectrics on
silicon wafers.
Area of Research: Semiconductor devices and materials.
1 Experience
in chemical vapor deposition of silicon dioxide thin films.
2 Familiar
with thin film transistor fabrication and characterization.
3
Extensive experience in low-temperature chemical vapor deposition of high-k
titanium dioxide films on flexible PET
substrates.
4
Familiar with standard silicon fabrication technology (including MOSFET
fabrication).
5
Extensive experience in CV measurement and electrical characterization of
dielectrics.
6
Experience in fabrication of plasma display panels (PDP) on flexible PET
substrates.
7
Experience in fabrication of thin-film tunneling transistors.
8
Familiarity with operation and application of radio-telescopes.
9
Experience in photo-induced selective etching of polymer films.
10
Experience in quantum-mechanical modeling and formulation of various scattering
mechanisms in solids.
11
Extensive experience in fabrication of pressure sensors (Map sensors) on silicon
membrane.
12
Experience in fabrication of atom-probe tips by growing of carbon
nano-structures on micro-cantilever made from silicon.
June 2002-to date
1. Development of a
new technique for low-temperature deposition of
TiO2 on
flexible PET substrates.
2. Extensive study
of the effects of H2O2
incorporation as the carrier gas on the rate, quality and surface
roughness of the deposited
TiO2
films.
3.
Fabrication of lateral pixel structure for PDP on rigid and flexible substrates.
4. Fabrication and
modeling of thin-film tunneling transistors.
5. Fabrication of
pressure sensors (map sensors) on silicon membrane.
6. Fabrication of
atom-probe tips on micro-cantilever made from silicon.
S. Mohajerzadeh, R. Tarighat, A. Goodarzi, B. Arvan
and A. Akhavan, “Flexible plasma display panels with a lateral DC
structure” US patent being filed.
1.
R. Tarighat, B. Arvan,
M. Monavari, S. Mohajerzadeh and A. Goodarzi, “Fabrication of Lateral DC
Plasma Display Panels with a Novel pixel structure”, published in IEEE
Trans. on Electron Devices.
2.
B. Arvan,
A.Khakifirooz, R. Tarighat, S. Mohajerzadeh, A. Goodarzi, E. Arzi, “Atmosoheric
pressure chemical vapor deposition of titanium dioxide films from TiCl4”,
published in Materials Science and Engineering B, Vol.109, June 2004.
3.
R.S. Tarighat, A. Goodarzi, S. Mohajerzadeh,
B. Arvan , M.R. Ghaderi and M. Fathipour, “Realization of Flexible
Plasma Display Panels on PET substrates”, to be published in IEEE Proceeding
(Special Issue on Flexible Electronics Technology , July 2005)
1.A.
Khakifirooz,
B. Arvan,
R. Tarighat, and S. Mohajerzadeh, “Atmospheric
pressure chemical vapor deposition of
titanium oxide films from
TiCl4”,
presented at EMRS, 2003, Strasbourg.
2.
B. Arvan, S.
Mohajerzadeh T. Arzi, “Study of titanium oxide films on plastic grown using a
low temperature CVD
technique”, presented at annual Iranian Physics conference,
Tabriz, Iran
3.
R. Tarighat, B. Arvan,
M. Monavary, S. Mohajerzadeh, A. Goodarzi and M. Yousefi, “Fabrication of
Lateral DC
Plasma Display
Panels on Flexible Substrates”, presented to International Conference On
Plasma Science (ICOPS),
June 2004, Baltimore,
Maryland.
4.
A. Behnam, B. Hekmatshoar, S. Mohajerzadeh,
B. Arvan,
F. Karbassian and E. Asl. Soleimani, “TiO2-based
tunneling
transistors on
silicon substrates”, proceedings of the
Material Research Society, 2004 Spring Meeting, San Francisco,
CA., vol. 811, April
2004.
5.
B. Arvan, S.
Mohajerzadeh, N. Izadi, Y. Abdi, S.Darbari, E. Arzi,
“Growth of carbon nano-structures and their
alloys on micro-cantilever made
from silicon to fabricate atom-probe tips”
presented at condensed matter
conference (2005) Iran.
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