Ashkan Behnam

1324NW, 16^th AVE., APT. 40,

Gainesville, FL, USA

Tel. 1-352-392-8411

abehnam@ufl.edu

behnam@tfl.ir

B.Sc. Electrical Engineering, Electronics
University of Tehran
Fall 1999 - Fall 2003
GPA: 18.0/20

M.Sc. Microelectronics, Semiconductor Devices and Materials
University of Tehran
Fall 2003 – Fall 2005
GPA: 19.0/20

Ph.D. Microelectronics Devices and Materials
University of Florida
Fall 2005 – To date

§   Working on fabrication of Poly-Ge TFTs built on flexible substrates. 

§   Developing the local-melted-point sweep and stress exertion crystallization techniques for Germanium.

§   Working on vertical tunneling transistors fabricated by means of CVD-deposited TiO₂.

§   Practicing the dopant diffusion methods in MOS and other field effect devices.

1. A. Behnam, B. Hekmatshoar, S. Mohajerzadeh, B. Arvan, F. Karbassian and A. Khakifirooz, “A Study of APCVD-Deposited TiO2Characteristics in the Structure of a Tunneling Transistor”, Proceedings of the Materials Research Society Spring Meeting, San Francisco, CA., vol. 811, Jan. 2004.

2. Y. Abdi , P. Hashemi, F.D. Nayeri, A. Behnam, S. Mohajerzadeh and , J. Koohsorkhi, M. D. Robertson and E. Arzi, “Fabrication of Nano-crystalline Porous Silicon on Si substrates by a Plasma Enhanced Hydrogenation Technique”, accepted in Materials Research Society Spring Meeting, San Francisco, CA, 2005.

1. A. Behnam, B. Arvan, S. Mohajerzadeh and B. Hekmatshoar, “TiO₂ Based Vertical Tunneling transistors on Silicon Wafer”, Proceedings of Iranian Conference on Electrical Engineering (ICEE), Spring 2004.

2. M. Khadem, F. Karbassian, F. Farbiz, A. Khorshid Ahmad, A. Behnam and S. Mohajerzadeh,   “A Study of the electrical characteristics of the SiO₂  deposited by the  CVD Method”, Proceedings of the Dense Materials Conference, pp. 123-129,Jan. 2003.

§   TCAD Lab., ECE Department, University of Tehran: http://eng.ut.ac.ir/tcadlab

§   Personal Web Page: http://khorshid.ut.ac.ir/~abehnam